OMNIFET III fully protected low-side driver

Features  Automotive qualified  Drain current: 25 A  ESD protection  Overvoltage clamp  Thermal shutdown  Current and power limitation  Very low standby current  Very low electromagnetic susceptibility  Compliant with European directive 2002/95/EC  Open drain status output

文件：2.01754 Mbytes 页数：28 Pages

STMICROELECTRONICS

意法半导体

fully protected low-side driver

文件：844.74 Kbytes 页数：28 Pages

STMICROELECTRONICS

意法半导体

OMNIFET III全保护下桥臂驱动器

The VNL5030J-E and VNL5030S5-E are monolithic devices made using STMicroelectronics®VIPower®technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in thermal shutdown protects the chip from overtemperature and short-circuit. Output current limitat • Automotive qualified \n• Drain current: 25 A \n• ESD protection \n• Overvoltage clamp \n• Thermal shutdown \n• Current and power limitation \n• Very low standby current \n• Very low electromagnetic susceptibility \n• Compliant with European directive 2002/95/EC \n• Open drain status output;

ST

意法半导体

OMNIFET III fully protected low-side driver

Features  Automotive qualified  Drain current: 25 A  ESD protection  Overvoltage clamp  Thermal shutdown  Current and power limitation  Very low standby current  Very low electromagnetic susceptibility  Compliant with European directive 2002/95/EC  Open drain status output

文件：2.01754 Mbytes 页数：28 Pages

STMICROELECTRONICS

意法半导体