Double channel high side driver for automotive applications

Features ■ General – Inrush current active management by power limitation – Very low stand-by current – 3.0V CMOS compatible inputs – Optimized electromagnetic emissions – Very low electromagnetic susceptibility – In compliance with the 2002/95/EC european directive ■ Diagnostic function

文件：512.64 Kbytes 页数：34 Pages

STMICROELECTRONICS

意法半导体

Double channel high side driver for automotive applications

Features ■ General – Inrush current active management by power limitation – Very low stand-by current – 3.0V CMOS compatible inputs – Optimized electromagnetic emissions – Very low electromagnetic susceptibility – In compliance with the 2002/95/EC european directive ■ Diagnostic function

文件：512.64 Kbytes 页数：34 Pages

STMICROELECTRONICS

意法半导体

Double channel high side driver for automotive applications

文件：747.04 Kbytes 页数：34 Pages

STMICROELECTRONICS

意法半导体

Double channel high side driver for automotive applications

文件：747.04 Kbytes 页数：34 Pages

STMICROELECTRONICS

意法半导体

双通道高侧驱动器，用于汽车应用

The VND5E160J-E is a double channel high-side driver manufactured in the ST proprietary VIPower M0-5 technology and housed in the tiny PowerSSO-12 package.\n\n The VND5E160J-E is designed to drive automotive grounded loads delivering protection, diagnostics and easy 3V and 5V CMOS-compatible interfa • GeneralInrush current active management by power limitationVery low stand-by current3.0V CMOS compatible inputsOptimized electromagnetic emissionsVery low electromagnetic susceptibilityIn compliance with the 2002/95/EC european directive \n• ProtectionsUndervoltage shutdownOvervoltage clampLoad cu;

ST

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门驱动器 Double Ch High Side Driver analog currnt

ST

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Package：PowerSSO-12；包装：卷带（TR） 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR SWTCH N-CHAN 1:1 PWRSSO12

STMICROELECTRONICS

意法半导体