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VND5E012MY-E数据手册集成电路(IC)的配电开关负载驱动器规格书PDF

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厂商型号

VND5E012MY-E

参数属性

VND5E012MY-E 封装/外壳为PowerSSO-36 裸露底部焊盘;包装为管件;类别为集成电路(IC)的配电开关负载驱动器;产品描述:IC PWR DRVR N-CHAN 1:1 PWRSSO36

功能描述

支持模拟电流感应的双通道高侧驱动器,用于汽车应用
IC PWR DRVR N-CHAN 1:1 PWRSSO36

封装外壳

PowerSSO-36 裸露底部焊盘

制造商

ST STMicroelectronics

中文名称

意法半导体 意法半导体集团

数据手册

原厂下载下载地址下载地址二

更新时间

2025-8-8 22:58:00

人工找货

VND5E012MY-E价格和库存,欢迎联系客服免费人工找货

VND5E012MY-E规格书详情

描述 Description

The VND5E012MY-E is a double channel high-side driver manufactured in the STMicroelectronics® VIPower®M0-5 technology and housed in the tiny PowerSSO-36 package. The VND5E012MY-E is designed to drive 12 V automotive grounded loads delivering protection, diagnostics and easy 3 V and 5 V CMOS compatible interface with any microcontroller.

The device integrates advanced protective functions such as load current limitation, inrush and overload active management by power limitation, overtemperature shut-off with auto restart and over-voltage active clamp. A dedicated analog current sense pin is associated with every output channel in order to provide Enhanced diagnostic functions including fast detection of overload and short-circuit to ground through power limitation indication and overtemperature indication.

The current sensing and diagnostic feedback of the whole device can be disabled by pulling the CS_DIS pin high to allow sharing of the external sense resistor with other similar devices.

特性 Features

• General
•Inrush current active management by power limitation
•Very low standby current
•3.0V CMOS compatible inputs
•Optimized electromagnetic emissions
•Very low electromagnetic susceptibility
•In compliance with the 2002/95/EC european directive
•Very low current sense leakage
• Diagnostic functions
•Proportional load current sense
•High current sense precision for wide current range
•Current sense disable
•Overload and short to ground (power limitation) indication
•Thermal shutdown indication
• Protections
•Undervoltage shutdown
•Overvoltage clamp
•Load current limitation
•Self limiting of fast thermal transients
•Protection against loss of ground and loss of VCC
•Overtemperature shutdown with auto restart (thermal shutdown)
•Reverse battery protection with self switch on of the Power MOSFET
•Electrostatic discharge protection

技术参数

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  • 制造商编号

    :VND5E012MY-E

  • 生产厂家

    :ST

  • Technology

    :M0-5Enhanced (M Vers.)

  • RDS(on)_typ(mΩ)

    :12

  • General Description

    :Double channel high-side driver with analog current sense for automotive applications

  • Marketing Status

    :Active

  • Package

    :PWSSO 36

  • Supply Voltage_min(V)

    :4.5

  • Supply Voltage_max(V)

    :28

  • Absolute Max Supply Voltage_max

    :41

  • Drain Current Limit_typ(A)

    :74

  • RoHS Compliance Grade

    :Ecopack2

  • Current sense

    :true

供应商 型号 品牌 批号 封装 库存 备注 价格
ST
2016+
SSOP36
3103
只做原装,假一罚十,公司可开17%增值税发票!
询价
ST
20+
na
65790
原装优势主营型号-可开原型号增税票
询价
ST
24+
SSOP36
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
询价
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
ST
22+
SSOP36
25000
只做原装进口现货,专注配单
询价
ST
24+
12300
原装正品现货,价格有优势!
询价
ST/意法
23+
SSOP
25000
代理原装现货,假一赔十
询价
ST/意法
23+
SSOP36
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
ST/意法半导体
21+
PowerSSO-36
8860
只做原装,质量保证
询价
ST
24+
SSOP36
90000
一级代理商进口原装现货、价格合理
询价