VN1206中文资料MOSFET, N-Channel Enhancement-Mode, 120V, 6.0 Ohm数据手册Microchip规格书
VN1206规格书详情
描述 Description
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
特性 Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
技术参数
- 制造商编号
：VN1206
- 生产厂家
：Microchip
- BVdss min (V)
：120
- Rds (on) max (Ohms)
：6.0
- CISSmax (pF)
：125
- Vgs(th) max (V)
：2.0
- Packages
：3\\TO-92
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
NA/ |
4832 |
原装现货,当天可交货,原型号开票 |
询价 | ||
原装 |
专业铁帽 |
CAN3 |
67500 |
铁帽原装主营-可开原型号增税票 |
询价 | ||
SI台湾雷达公司 |
24+ |
TO-92 |
2752 |
询价 | |||
MICROCHIP(美国微芯) |
2021+ |
TO-92-3 |
499 |
询价 | |||
S |
23+ |
TO-220 |
6000 |
原装正品，支持实单 |
询价 | ||
Microchip Technology |
2022+ |
TO-226-3,TO-92-3(TO-226AA) |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
MICROCHIP(美国微芯) |
2447 |
TO-92-3 |
31500 |
1000个/袋一级代理专营品牌!原装正品,优势现货,长 |
询价 | ||
2023+ |
TO-92 |
4635 |
进口原装现货 |
询价 | |||
2023+ |
5800 |
进口原装,现货热卖 |
询价 | ||||
8534 |
CAN3 |
68 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 |
