VN10KN3数据手册Microchip中文资料规格书

描述 Description

General Description
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient  inherent  in  MOS  devices.  Characteristic  of  all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

特性 Features

►Free from secondary breakdown
►Low power drive requirement
►Ease of paralleling
►Low CISS and fast switching speeds
►Excellent thermal stability
►Integral source-drain diode
►High input impedance and high gain
Applications
► Motor controls
► Converters
► Amplifers
► Switches
► Power supply circuits
► Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)

应用 Application

► Motor controls
► Converters
► Amplifers
► Switches
► Power supply circuits
► Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)