VMO650-01F中文资料艾赛斯数据手册PDF规格书

HiPerFET™ MOSFET Module

N-Channel Enhancement Mode

特性 Features

● International standard package

● Direct Copper Bonded Al2O3 ceramic base plate

● Isolation voltage 3600 V~

● Low RDS(on) HDMOSTM process

● Low package inductance for high speed switching

● Kelvin Source contact for easy drive

Applications

● AC motor speed control for electric vehicles

● DC servo and robot drives

● Switched-mode and resonant-mode power supplies

● DC choppers

Advantages

● Easy to mount

● Space and weight savings

● High power density

● Low losses