Dual Power MOSFET Module

Common-Source connected N-Channel Enhancement Mode Features • Two MOSFET with common source • International standard package JEDEC TO-240 AA • Direct copper bonded Al2O3 ceramic base plate • Isolation voltage 3000 V~ • Low RDS(on) HDMOSTM process • Low package inductance for high speed swit

文件：84.72 Kbytes 页数：2 Pages

IXYS

艾赛斯

Dual Switch Common Source MOSFET Modules

·Vdss: 70V - 200V Id(25): 84A - 165A \n·Very Low Rds(on): 6.0 mOhms\n·Fast intrinsic diode. dv/dt ruggedness \n·low inductive current path\n·Kelvin source terminals for easy drive\n·2500 V rms Isolation with ceramic base plate;

Littelfuse

力特

IDT
CABGA-144

IDT

上传：深圳市智创诚芯电子科技有限公司

SYNAPTICS
BGA

Synaptics

上传：深圳市向鸿伟业电子有限公司

Ymin永铭
SMD,D10xL6.9mm

Ymin永铭

上传：深圳市澳亿芯电子科技有限公司