N-Channel Enhancement Mode

FEATURES · Low gate charge for high frequency operation · Unclamped inductive switching (UIS) capability · dv/dt ruggedness · High reliability · Fast intrinsic reverse diode APPLICATIONS · Drives and power supplies · Battery or fuel cell powered · Automotive, industrial vehicle etc.

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ISC

无锡固电

HiPerFET-TM Power MOSFET H-Bridge Topology in ECO-PAC 2

文件：71.91 Kbytes 页数：4 Pages

IXYS

艾赛斯

H-Bridge MOSFET Modules

·Vdss: 100V - 600V, Id(25): 38A - 63A \n·Low Rds(on): 25.0 mOhms\n·dv/dt ruggedness. Fast reverse diode\n·low inductive current path\n·Kelvin source terminals for easy drive\n·Isolated ceramic base plate with 2500 V rms isolation;

Littelfuse

力特