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VI30100C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A

UltraLowVF=0.455VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •Solderdip275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective

VishayVishay Siliconix

威世科技威世科技半导体

VI30100C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半导体

VI30100C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半导体

VI30100C-E3

Trench MOS Schottky technology

UltraLowVF=0.455VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbatht

VishayVishay Siliconix

威世科技威世科技半导体

VI30100C-E3

Dual High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C(forTO-263AB package) •Lowthermalresistance •Solderbathtemperature275°Cmaximum,10s,per JESD22-B106

VishayVishay Siliconix

威世科技威世科技半导体

VI30100C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A

UltraLowVF=0.455VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •Solderdip275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective

VishayVishay Siliconix

威世科技威世科技半导体

VI30100C-E3SLASH4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A

UltraLowVF=0.455VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •Solderdip275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective

VishayVishay Siliconix

威世科技威世科技半导体

VI30100C-E3

Dual High Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半导体

VI30100C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半导体

VI30100C-E3SLASH4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半导体

详细参数

  • 型号:

    VI30100C

  • 制造商:

    VISHAY

  • 制造商全称:

    Vishay Siliconix

  • 功能描述:

    Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A

供应商型号品牌批号封装库存备注价格
VISHAY
23+
TO-262
8600
全新原装现货
询价
VISHAY
25+23+
TO-262
15506
绝对原装正品全新进口深圳现货
询价
VISHAY原装
24+
TO-220
30980
原装现货/放心购买
询价
VISHAY/威世
23+
TO-262
50000
全新原装正品现货,支持订货
询价
VISHAY
23+
TO-262
8560
受权代理!全新原装现货特价热卖!
询价
VISHAY/威世
24+
NA/
3519
原厂直销,现货供应,账期支持!
询价
VISHAY/威世
22+
TO-262
18000
只做全新原装,支持BOM配单,假一罚十
询价
VISHAY/威世
24+
TO-262
60000
全新原装现货
询价
VISHAY原装
21+
TO-262
269
原装现货假一赔十
询价
VISHAY
2016+
TO262
6528
只做进口原装现货!假一赔十!
询价
更多VI30100C供应商 更新时间2025-7-22 14:03:00