Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology Gen 2 • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-2

文件：207.93 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件：157.12 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件：168.41 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.59 V at IF = 5 A

Trench MOS Schottky technology Gen 2\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Vishay

威世

肖特基二极管与整流器 20A 200V Trench Stky Rectifier

Vishay

威世

Package：TO-262-3，长引线，I²Pak，TO-262AA；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE SCHOTTKY 200V 20A TO262AA

Vishay General Semiconductor - Diodes Division