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VI20200C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A

UltraLowVF=0.60VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathte

VishayVishay Siliconix

威世科技威世科技半导体

VI20200C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半导体

VI20200C

Dual High Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半导体

VI20200C

Dual High Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半导体

VI20200C-E3

Trench MOS Schottky technology

UltraLowVF=0.60VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathte

VishayVishay Siliconix

威世科技威世科技半导体

VI20200C-E3

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106

VishayVishay Siliconix

威世科技威世科技半导体

VI20200C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A

UltraLowVF=0.60VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathte

VishayVishay Siliconix

威世科技威世科技半导体

VI20200C-E3SLASH4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A

UltraLowVF=0.60VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathte

VishayVishay Siliconix

威世科技威世科技半导体

VI20200C-E3

Dual High Voltage Trench MOS Barrier Schottky Rectifier; Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

VishayVishay Siliconix

威世科技威世科技半导体

VI20200C-E3-4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半导体

详细参数

  • 型号:

    VI20200C

  • 制造商:

    VISHAY

  • 制造商全称:

    Vishay Siliconix

  • 功能描述:

    Dual High-Voltage Trench MOS Barrier Schottky Rectifier

供应商型号品牌批号封装库存备注价格
原装
25+23+
17462
绝对原装正品全新进口深圳现货
询价
VISHAY/威世
2447
TO262
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
VISHAY
25+
2500
原厂原装,价格优势
询价
VISHAY/威世
23+
TO262
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
VISHAY
17+
TO262
6200
100%原装正品现货
询价
VISHAY
1809+
TO-262
3675
就找我吧!--邀您体验愉快问购元件!
询价
VISHAY
21+
TO262
1625
只做原装正品,不止网上数量,欢迎电话微信查询!
询价
VISHAY
23+
TO262
50000
全新原装正品现货,支持订货
询价
VISHAY/威世
23+
TO-262
50000
全新原装正品现货,支持订货
询价
Vishay Semiconductor Diodes Di
22+
TO262AA
9000
原厂渠道,现货配单
询价
更多VI20200C供应商 更新时间2025-7-27 21:28:00