首页 >VI-234P-IU>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
4A,250V,0.700Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandP-Channelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
7A,250V,0.70Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
7A,250V,0.70Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
7A,250V,0.70Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
5A,250V,0.715Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
5A,250V,0.715Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
5A,250V,0.715Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
4A,250V,0.610Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
4A,250V,0.610Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
DC/DCConverterApplications Features •LowON-resistance. •4.0Vdrive. •Ultrahigh-speedswitching. | SANYOSanyo 三洋三洋电机株式会社 | SANYO | ||
6A,250V,0.600Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
6A,250V,0.600Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
TheFT234XDisaUSBtoserialUARTinterfacewithoptimisedpackaging(3mmx3mm12pinDFN)forsmallerPCBdesignsandthefollowingadvancedfeatures | FTDIFuture Technology Devices International Ltd FTDIFuture Technology Devices International Ltd | FTDI | ||
SinglechipUSBtoasynchronousserialdatatransferinterface | FTDIFuture Technology Devices International Ltd FTDIFuture Technology Devices International Ltd | FTDI | ||
TheFT234XDisaUSBtoserialUARTinterfacewithoptimisedpackaging(3mmx3mm12pinDFN)forsmallerPCBdesignsandthefollowingadvancedfeatures | FTDIFuture Technology Devices International Ltd FTDIFuture Technology Devices International Ltd | FTDI | ||
USBtoBASICUARTIC | FTDIFuture Technology Devices International Ltd FTDIFuture Technology Devices International Ltd | FTDI | ||
TheFT234XDisaUSBtoserialUARTinterfacewithoptimisedpackaging(3mmx3mm12pinDFN)forsmallerPCBdesignsandthefollowingadvancedfeatures | FTDIFuture Technology Devices International Ltd FTDIFuture Technology Devices International Ltd | FTDI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SILICONIX |
2019 |
CAN3 |
29000 |
原厂VIP渠道,亚太地区一级代理商,可提供更多数量! |
询价 | ||
VICOR |
2023+ |
48V/95V/200W |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
VICOR |
23+ |
模块 |
377 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
询价 |
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