NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VHB10-12F is Designed for 12.5 V, Class C Applications up to 175 MHz. FEATURES: • Common Emitter • PG = 10 dB at 10 W/175 MHz • Omnigold™ Metalization System

文件：17.79 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

文件：18.65 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

文件：18.65 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VHB10-12S is Designed for 12.5 V, High Band Application. FEATURES: • Common Emitter • PG = 10 dB at 10 W/175 MHz • Omnigold™ Metalization System

文件：16.75 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

文件：86.85 Kbytes 页数：2 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VLB10-12F is Designed for 12.5 V, Large Signal Class C Amplifier Applications up to 50 MHz. FEATURES: • Common Emitter • PG = 16 dB at 10 W/50 MHz • Omnigold™ Metalization System

文件：17.69 Kbytes 页数：1 Pages

ASI