NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VHB50-28F is an NPN power transistor designed for 28 V Class-C ground station transmitters, it utilizes emitter ballasting and gold metallization to provide optimum VSWR capability. FEATURES: • Common Emitter • PG = 6.0 dB at 50 W/175 MHz • Omnigold™ Metalization System

文件：18.25 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

文件：20.98 Kbytes 页数：2 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

文件：20.98 Kbytes 页数：2 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

文件：20.85 Kbytes 页数：2 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VHB50-28S is an NPN power transistor designed for 25 V Class-C ground station transmitters, it utilizes emitter ballasting and gold metalization to provide optimum VSWR capability. FEATURES: • Common Emitter • PG = 6.0 dB at 50 W/175 MHz • Omnigold™ Metalization System •

文件：17.19 Kbytes 页数：1 Pages

ASI