CMOS Synchronous Dynamic RAM

Description The device is CMOS Synchronous Dynamic RAM organized as 1,048,576 - word x 16-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only power supply. It is packaged in JEDEC standard pinout and standard plastic TSOP packa

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CMOS Synchronous Dynamic RAM

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CMOS Synchronous Dynamic RAM

[Vanguard International Semiconductor] Description The VG36644041D, VG36648041D and VG36641641D are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4 and 1,048,576 x 16 x 4 (word x bit x bank), respectively. The synchronous D

文件：1.36481 Mbytes 页数：69 Pages

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CMOS Synchronous Dynamic RAM

Description The VG36644041D, VG36648041D and VG36641641D are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4 and 1,048,576 x 16 x 4 (word x bit x bank), respectively. The synchronous DRAMs achieved high-speed data transfer u

文件：1.36481 Mbytes 页数：69 Pages

VML

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