| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
VFT6045C | Dual Low-Voltage Trench MOS Barrier Schottky Rectifier 文件：74.25 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世科技 | Vishay | |
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application • Material categorization: for definitions of compliance please see www.vishay 文件：132.01 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application • Material categorization: for definitions of compliance please see www.vishay 文件：132.01 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION 文件：129.16 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION 文件：129.16 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection 文件：81.86 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Trench MOS Barrier Schottky Rectifier 文件：83.43 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Trench MOS Barrier Schottky Rectifier 文件：83.43 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection 文件：83.8 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection 文件：81.86 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世科技 | Vishay |
详细参数
- 型号：
VFT6045C
- 制造商：
VISHAY
- 制造商全称：
Vishay Siliconix
- 功能描述：
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
TO-220F |
12000 |
原装正品真实现货杜绝虚假 |
询价 | ||
JINGDAO/晶导微 |
23+ |
SMC(DO-214AB) |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
VISHAY |
25+ |
TO-220 |
1675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Vishay Semiconductor Diodes Di |
22+ |
ITO220AB |
9000 |
原厂渠道,现货配单 |
询价 | ||
VISHAY/威世 |
23+ |
ITO-220AB |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
VISHAY/威世 |
23+ |
ITO220AB |
6000 |
原装正品，支持实单 |
询价 | ||
VISHAY(威世) |
24+ |
TO220F |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
Vishay General Semiconductor - |
25+ |
TO-220-3 全封装 隔离接片 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
VISHAY/威世 |
24+ |
TO220F |
19000 |
只做正品原装现货 |
询价 | ||
XPPower |
24+ |
NA |
1097 |
进口原装正品优势供应 |
询价 |
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