Dual Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

文件：128.919 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

Dual Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Not recommended for PCB bottom side wave mounting • Material categorization: for definitions of compliance plea

文件：102.6 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技