Dual Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

文件：207.72 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Trench MOS Barrier Schottky Rectifier

文件：155.94 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Trench MOS Barrier Schottky Rectifier

文件：166.6 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Vishay

威世

Schotty Rectifier Diode

FEATURES · Low Forward Voltage Drop, Low Power Losses · High Efficiency Operation · Low Thermal Resistance APPLICATIONS · Switching Power Supply (SPS) · Reverse Battery Protection · DC-DC Converters

文件：382.67 Kbytes 页数：2 Pages

ISC

无锡固电

Schotty Rectifier Diode

FEATURES · Low Forward Voltage Drop, Low Power Losses · High Efficiency Operation · Low Thermal Resistance APPLICATIONS · Switching Power Supply (SPS) · Reverse Battery Protection · DC-DC Converters

文件：382.67 Kbytes 页数：2 Pages

ISC

无锡固电

Dual Trench MOS Barrier Schottky Rectifier

文件：148.93 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Trench MOS Barrier Schottky Rectifier

文件：148.93 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Package：TO-220-3 全封装，隔离接片；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE SCHOTTKY 30A 80V ITO-220AB

Vishay General Semiconductor - Diodes Division