Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

文件：137.67 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

文件：84.32 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

文件：137.67 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

文件：84.32 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

文件：84.32 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 5 A

分立 Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Vishay

威世

Package：TO-220-2 全封装，隔离接片；包装：卷带（TR）剪切带（CT） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 45V 20A ITO220AC

Vishay General Semiconductor - Diodes Division