Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

文件：75.69 Kbytes 页数：4 Pages

VishayVishay Siliconix

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Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • TJ 200 °C max. in solar bypass mode application • Material categorization: For definitions of compliance please

文件：93.4 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • TJ 200 °C max. in solar bypass mode application • Material categorization: For definitions of compliance please

文件：93.4 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 10 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • TJ 200 °C max. in solar bypass mode application

文件：92.76 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-2

文件：216.59 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-2

文件：216.59 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 10 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • TJ 200 °C max. in solar bypass mode application

文件：92.76 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • TJ 200 °C max. in solar bypass mode application • Material categorization: For definitions of compliance please

文件：82.9 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • TJ 200 °C max. in solar bypass mode application • Material categorization: For definitions of compliance please

文件：82.9 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIO

文件：90.28 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技