N-Channel 650V (D -S) Super Junction Power MOSFET

FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available

文件：1.12135 Mbytes 页数：12 Pages

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N-Channel 650 V (D-S) MOSFET

文件：765.82 Kbytes 页数：9 Pages

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N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：780.29 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 650V (D -S) Super Junction Power MOSFET

FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available

文件：1.12135 Mbytes 页数：12 Pages

VBSEMI

微碧半导体