N-Channel 650V (D-S) Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS)

文件：483.57 Kbytes 页数：8 Pages

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N-Channel 650V (D-S) Power MOSFET

文件：705.09 Kbytes 页数：8 Pages

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N-Channel 650V (D-S) Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS)

文件：483.57 Kbytes 页数：8 Pages

VBSEMI

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N-Channel 650 V (D-S) Super Junction MOSFET

FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Telecommunications - Server and telecom power supplies • Lighting

文件：445.17 Kbytes 页数：8 Pages

VBSEMI

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N-Channel 650 V (D-S) Super Junction MOSFET

FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Telecommunications - Server and telecom power supplies • Lighting

文件：445.17 Kbytes 页数：8 Pages

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丝印：D2PAK；Package：TO-263；N-Channel 650-V (D-S) Super Junction MOSFET

文件：863.37 Kbytes 页数：11 Pages

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MOSFET

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