VBM165R04_V01规格书应用电路行情报价-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
VBM165R04_V01	文件：763.66 Kbytes Page：9 Pages	N-Channel 650 V (D-S) MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC 文件：763.66 Kbytes 页数：9 Pages	VBSEMI 微碧半导体	VBSEMI
VBE165R04_V01	文件：787.32 Kbytes Page：9 Pages	Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC 文件：787.32 Kbytes 页数：9 Pages	VBSEMI 微碧半导体	VBSEMI
VBPW34FASR	文件：0 bytes Page：0 Pages	2-SMD	VISHAY/威世上传：深圳市华芯伟电子科技有限公司	VISHAY/威世

更多VBM165R04_V01供应商更新时间2025-12-5 11:01:00