VBM1201K中文资料微碧半导体数据手册PDF规格书
VBM1201K规格书详情
FEATURES
• TrenchFET® Power MOSFET
• 175 °C Junction Temperature
• PWM Optimized
• 100 Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Primary Side Switch
FEATURES
• TrenchFET® Power MOSFET
• 175 °C Junction Temperature
• PWM Optimized
• 100 Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Primary Side Switch
