VBM1154N中文资料微碧半导体数据手册PDF规格书
VBM1154N规格书详情
FEATURES
• TrenchFET® Power MOSFETs
• 175 °C Junction Temperature
• New Low Thermal Resistance Package
• PWM Optimized
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Primary Side Switch
FEATURES
• TrenchFET® Power MOSFETs
• 175 °C Junction Temperature
• New Low Thermal Resistance Package
• PWM Optimized
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Primary Side Switch
