N-Channel 600V(D-S) Super Junction Power MOSFET

FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available

文件：1.1204 Mbytes 页数：12 Pages

VBSEMI

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Power MOSFET

文件：1.62042 Mbytes 页数：12 Pages

VBSEMI

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Power MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFRC20, SiHFRC20) • Straight Lead (IRFUC20, SiHFUC20) • Available in Tape and Reel • Fast Switching • Ease of Paralleling • Compliant to RoHS Directive 200

文件：1.72714 Mbytes 页数：12 Pages

VBSEMI

微碧半导体

N-Channel 600V(D-S) Super Junction Power MOSFET

FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available

文件：1.1204 Mbytes 页数：12 Pages

VBSEMI

微碧半导体