Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C 좪 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS

文件：106.07 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Schottky technology

文件：95.06 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

分立 Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Vishay

威世

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C 좪 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS

文件：106.07 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件：84.99 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE SCHOTTKY 60A 170V TO-263AB

Vishay General Semiconductor - Diodes Division

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 170V TO263

Vishay General Semiconductor - Diodes Division