VB20120C-M3_V01中文资料威世科技数据手册PDF规格书

厂商型号	VB20120C-M3_V01
功能描述	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
文件大小	103.12 Kbytes
页面数量	4 页
生产厂商	Vishay Siliconix
企业简称	Vishay【威世科技】
中文名称	威世科技半导体官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-5-17 20:00:00
人工找货	VB20120C-M3_V01价格和库存，欢迎联系客服免费人工找货

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters, and reverse battery protection.

MECHANICAL DATA

Case: D2PAK (TO-263AB)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS-compliant, and

commercial grade

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

Polarity: as marked

Mounting Torque: 10 in-lbs maximum