| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
V8PM153 | High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier 文件：97.66 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
V8PM153 | High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.54 V at IF = 4 A Very low profile - typical height of 1.1 mm\nTrench MOS Schottky technology\nLow forward voltage drop, low power losses; | Vishay 威世 | Vishay | |
High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.54 V at IF = 4 A • Very low profile - typical height of 1.1 mm • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 文件：97.66 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.54 V at IF = 4 A • Very low profile - typical height of 1.1 mm • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 文件：97.66 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.54 V at IF = 4 A • Very low profile - typical height of 1.1 mm • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 文件：97.66 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.54 V at IF = 4 A • Very low profile - typical height of 1.1 mm • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 文件：97.66 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier 文件：97.66 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier 文件：97.66 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier 文件：97.66 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier 文件：97.66 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - |
25+ |
TO-277A(SMPC) |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
VISHAY |
22+ |
SMD |
202500 |
询价 | |||
VISHAY |
24+ |
N/A |
129133 |
原装原装原装 |
询价 | ||
VIS |
24+ |
6000 |
加QQ:78517935原装正品有单必成 |
询价 | |||
VISHAY |
2022+PB |
TO-277A |
1500 |
询价 | |||
24+ |
N/A |
76000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
VIIYONG/微容 |
21+ |
1000 |
进口原装现货假一赔万力挺实单 |
询价 | |||
A |
24+ |
b |
4 |
询价 | |||
25+ |
SOT5 |
3629 |
原装优势!房间现货!欢迎来电! |
询价 |
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