丝印：SC74SEP；Package：TSSOP；SN54SC2T74-SEP Radiation Tolerant, Dual D-Type Flip-Flop With Integrated Translation

1 Features • Vendor item drawing available, VID V62/23632-01XE • Total ionizing dose characterized at 30 krad (Si) – Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si) • Single-event effects (SEE) characterized: – Single event latch-up (SEL)

文件：1.06467 Mbytes 页数：28 Pages

TI

德州仪器

丝印：SC74SEP；Package：TSSOP；SN54SC2T74-SEP Radiation Tolerant, Dual D-Type Flip-Flop With Integrated Translation

1 Features • Vendor item drawing available, VID V62/23632-01XE • Total ionizing dose characterized at 30 krad (Si) – Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si) • Single-event effects (SEE) characterized: – Single event latch-up (SEL)

文件：1.06507 Mbytes 页数：28 Pages

TI

德州仪器

丝印：SC74SEP；Package：TSSOP；SN54SC2T74-SEP Radiation Tolerant, Dual D-Type Flip-Flop With Integrated Translation

1 Features • Vendor item drawing available, VID V62/23632-01XE • Total ionizing dose characterized at 30 krad (Si) – Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si) • Single-event effects (SEE) characterized: – Single event latch-up (SEL)

文件：1.06507 Mbytes 页数：28 Pages

TI

德州仪器

丝印：SC74SEP；Package：TSSOP；SN54SC2T74-SEP Radiation Tolerant, Dual D-Type Flip-Flop With Integrated Translation

1 Features • Vendor item drawing available, VID V62/23632-01XE • Total ionizing dose characterized at 30 krad (Si) – Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si) • Single-event effects (SEE) characterized: – Single event latch-up (SEL)

文件：1.15731 Mbytes 页数：30 Pages

TI

德州仪器

丝印：SC74SEP；Package：TSSOP(PW)；SN54SC2T74-SEP Radiation Tolerant, Dual D-Type Flip-Flop With Integrated Translation

1 Features • Vendor item drawing available, VID V62/23632-01XE • Total ionizing dose characterized at 30 krad (Si) – Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si) • Single-event effects (SEE) characterized: – Single event latch-up (SEL)

文件：1.12677 Mbytes 页数：29 Pages

TI

德州仪器