128Mbit LOW-POWER SDRAM 2.5 VOLT, TSOP II / BGA PACKAGE 8M X 16

Description The V55C2128164V(T/B) is a four bank Synchronous DRAM organized as 4 banks x 2Mbit x 16. The V55C2128164V(T/B) achieves high speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock

文件：591.5 Kbytes 页数：44 Pages

MOSEL

茂矽电子

128Mbit LOW-POWER SDRAM 2.5 VOLT, TSOP II / BGA PACKAGE 8M X 16

Description The V55C2128164V(T/B) is a four bank Synchronous DRAM organized as 4 banks x 2Mbit x 16. The V55C2128164V(T/B) achieves high speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock

文件：591.5 Kbytes 页数：44 Pages

MOSEL

茂矽电子

128Mbit LOW-POWER SDRAM 2.5 VOLT, TSOP II / BGA PACKAGE 8M X 16

Description The V55C2128164V(T/B) is a four bank Synchronous DRAM organized as 4 banks x 2Mbit x 16. The V55C2128164V(T/B) achieves high speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock

文件：591.5 Kbytes 页数：44 Pages

MOSEL

茂矽电子

128Mbit LOW-POWER SDRAM 2.5 VOLT, TSOP II / BGA PACKAGE 8M X 16

Mosel

茂矽电子