256K x 16 FAST PAGE MODE CMOS DYNAMIC RAM

Description The V53C16256H is a 262,144 x 16 bit high-performance CMOS dynamic random access memory. The V53C16256H offers Fast Page mode with dual CAS inputs. An address, CAS and RAS input capacitances are reduced to one quarter when the x4 DRAM is used to construct the same memory density. The

文件：146.11 Kbytes 页数：19 Pages

MOSEL

茂矽电子

256K X 16 FAST PAGE MODE CMOS DYNAMIC RAM WITH SELF REFRESH

Description The V53C16256SH is a 262,144 x 16 bit high-performance CMOS dynamic random access memory. The V53C16256SH offers Fast Page mode with dual CAS inputs. An address, CAS and RAS input capacitances are reduced to one quarter when the x4 DRAM is used to construct the same memory density. Th

文件：145.84 Kbytes 页数：19 Pages

MOSEL

茂矽电子

256K x 16 FAST PAGE MODE CMOS DYNAMIC RAM

Mosel

茂矽电子

256K x 16 FAST PAGE MODE CMOS DYNAMIC RAM

Description The V53C16256H is a 262,144 x 16 bit high-performance CMOS dynamic random access memory. The V53C16256H offers Fast Page mode with dual CAS inputs. An address, CAS and RAS input capacitances are reduced to one quarter when the x4 DRAM is used to construct the same memory density. The

文件：146.11 Kbytes 页数：19 Pages

MOSEL

茂矽电子

256K X 16 FAST PAGE MODE CMOS DYNAMIC RAM WITH SELF REFRESH

Description The V53C16256SH is a 262,144 x 16 bit high-performance CMOS dynamic random access memory. The V53C16256SH offers Fast Page mode with dual CAS inputs. An address, CAS and RAS input capacitances are reduced to one quarter when the x4 DRAM is used to construct the same memory density. Th

文件：145.84 Kbytes 页数：19 Pages

MOSEL

茂矽电子

256K x 16 FAST PAGE MODE CMOS DYNAMIC RAM

Description\nThe V53C16256H is a 262,144 x 16 bit high-performance CMOS dynamic random access memory. The V53C16256H offers Fast Page mode with dual CAS inputs. An address, CAS and RAS input capacitances are reduced to one quarter when the x4 DRAM is used to construct the same memory density. The V5 ■ 256K x 16-bit organization\n■ Fast Page Mode for a sustained data rate\n   of 53 MHz.\n■ RAS access time: 30, 35, 40, 45, 50, 60 ns\n■ Dual CAS Inputs\n■ Low power dissipation\n■ Read-Modify-Write, RAS-Only Refresh,\n   CAS-Before-RAS Refresh\n■ Refresh Interval: 512 cycles/8 ms\n■ Available in 40;

Mosel

茂矽电子

256K X 16 FAST PAGE MODE CMOS DYNAMIC RAM WITH SELF REFRESH

Mosel

茂矽电子