ISL9V5036S3ST-F085C

Marking：V5036SC；Package：D2PAK-3；ECOSPARK Ignition IGBT 500 mJ, 360 V, N−Channel Ignition IGBT

GeneralDescription TheISL9V5036S3ST,ISL9V5036S3ST−F085Cand ISL9V5036P3−F085arethenextgenerationIGBTsthatoffer outstandingSCIScapabilityintheD2−Pak(TO−263)andTO−220 plasticpackage.Thesedevicesareintendedforuseinautomotive ignitioncircuits,specificallyascoildriv

NC7SV57P6X

Marking：V57；Package：SC-88；TinyLogic ULP-A Universal Configurable Logic Gates

TheNC7SV57andNC7SV58areuniversalconfigurablelogicgates intinyfootprintpackages.Thedevicesaredesignedtooperate forVCC=0.9Vto3.6V. Features •Designedfor0.9Vto3.6VVCCOperation •2.4nstPDat3.3V(Typ) •Inputs/OutputsOver−VoltageTolerantupto3.6V •IOF

NC7SV58P6X

Marking：V58；Package：SC-88；TinyLogic ULP-A Universal Configurable Logic Gates

TheNC7SV57andNC7SV58areuniversalconfigurablelogicgates intinyfootprintpackages.Thedevicesaredesignedtooperate forVCC=0.9Vto3.6V. Features •Designedfor0.9Vto3.6VVCCOperation •2.4nstPDat3.3V(Typ) •Inputs/OutputsOver−VoltageTolerantupto3.6V •IOF

NVMFS5113PLT1G

Marking：V5113L；Package：DFN5；MOSFET ??Power, Single P-Channel -60 V, 14 m, -64 A

Features •LowRDS(on)toMinimizeConductionLosses •HighCurrentCapability •AvalancheEnergySpecified •NVMFS5113PLWF−WettableFlanksProduct •NVMPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 QualifiedandPPAPCapable

PESD12VL2BT

Marking：V5T；Package：SOT-23；Solid-state silicon-avalanche technology

Features 350Wpeakpulsepower(tp=8/20μs) Bidirectionalconfigurations Solid-statesilicon-avalanchetechnology Lowclampingvoltage Lowleakagecurrent IEC61000-4-2±30kVcontact±30kVair IEC61000-4-4(EFT)40A(5/50ns) IEC61000-4-5(Lightning)12A(8/20μs) Applications Dataline

RT9167-2HPB

Marking：V5-***；Package：SOT-25；Low-Noise, Fixed Output Voltage,300mA/500mA LDO Regulator

GeneralDescription TheRT9167/Aisa300mA/500mAlowdropoutandlownoisemicropowerregulatorsuitableforportableapplications.Theoutputvoltagesrangefrom1.5Vto5.0Vin100mVincrementsand2accuracy.TheRT9167/AisdesignedforusewithverylowESRcapacitors.Theoutputremains

SDT23C12L02

Marking：V5T；Package：SOT23；2-Line Bl-directional TVS Diode

Features 80Wpeakpulsepower(8/20μs) •Ultralowleakage:nAlevel •Operatingvoltage:12V •Lowclampingvoltage •Complieswithfollowingstandards: -IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:130kV -IEC61000-4-4(EFT)40A(5/50ns) -IEC61000-4-5(Lig

SMC12

Marking：V5T；Package：SOT23；2-Line Bl-directional TVS Diode

Features •80Wpeakpulsepower(8/20μs) •Ultralowleakage:nAlevel •Operatingvoltage:12V •Lowclampingvoltage •Complieswithfollowingstandards: -IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV -IEC61000-4-4(EFT)40A(5/50ns) -IEC61000-4-5(L

74LVC1G57GV-Q100

Marking：V57；Package：SC-74；Low-power configurable multiple function gate

74LVC1G58GV-Q100

Marking：V58；Package：TSOP6；Low-power configurable multiple function gate