V40D60C

Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable: -

V40D60C

Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

V40D60C_V01

Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable: -

V40D60CHM3SLASHI

Dual Low-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.31 V at IF = 5.0 A

•TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable: -Automotive

V40D60C-M3SLASHI

Dual Low-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.31 V at IF = 5.0 A

•TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable: -Automotive

V40D60CHM3/I

Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

V40D60C-M3/I

Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

V40D60CHM3/I

Package：TO-263-3，D²Pak（2 引线 + 凸片）变型；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：40A 60V SMPD TRENCH SKY RECT

Vishay General Semiconductor - Diodes Division

V40D60C-M3/I

Package：TO-263-3，D²Pak（2 引线 + 凸片）变型；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：40A 60V SMPD TRENCH SKY RECT

Vishay General Semiconductor - Diodes Division

B40D60

POWERMODULESDIODE

Description TheB40J../B40C../B40D..seriesofB-modulesusepowerdiodesinhalf0bridgeconfiguration. Thesemiconductorsareelectricallyisolatedfromthemetalbaseallowingcommonheatsinkandcompactassembliestobebuilt.Theycanbeinterconnectedtoformsingleorthreephasebridges.