V30M120M-E3数据表ic资料供应商报价Vishay-114ic电子网

首页 >V30M120M-E3>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
V30M120M-E3	文件：99.06 Kbytes Page：4 Pages	Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein	VishayVishay Siliconix 威世科技	Vishay
V30M120M-E3	文件：100 Kbytes Page：4 Pages	Trench MOS Schottky technology	VishayVishay Siliconix 威世科技	Vishay
V30M120M-E3_V01	文件：99.06 Kbytes Page：4 Pages	Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein	VishayVishay Siliconix 威世科技	Vishay
V30M120M-E3_15	文件：88.68 Kbytes Page：4 Pages	Dual High Voltage Trench MOS Barrier Schottky Rectifier	VishayVishay Siliconix 威世科技	Vishay
V30M120M-E3/4W	文件：100 bytes Page：1 Pages	包装：管件封装/外壳：TO-220-3 类别：分立半导体产品二极管 - 整流器 - 阵列描述：DIODE SCHOTTKY 15A 120V TO-220AB	Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division	Vishay General Semiconductor - Diodes Division

更多V30M120M-E3供应商更新时间2024-5-31 15:30:00