V30K170

High Current Density Surface-Mount (TMBS짰) Trench MOS Barrier Schottky Rectifier

V30K170HM3SLASHH

High Current Density Surface-Mount (TMBS®) Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 5 A

•TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -Automotiveorderingcode:baseP/NHM3

V30K170HM3SLASHI

High Current Density Surface-Mount (TMBS®) Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 5 A

•TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -Automotiveorderingcode:baseP/NHM3

V30K170-M3SLASHH

High Current Density Surface-Mount (TMBS®) Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 5 A

•TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -Automotiveorderingcode:baseP/NHM3

V30K170-M3SLASHI

High Current Density Surface-Mount (TMBS®) Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 5 A

•TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -Automotiveorderingcode:baseP/NHM3

V30K170HM3/H

High Current Density Surface-Mount (TMBS짰) Trench MOS Barrier Schottky Rectifier

V30K170HM3/I

High Current Density Surface-Mount (TMBS짰) Trench MOS Barrier Schottky Rectifier

V30K170-M3/H

High Current Density Surface-Mount (TMBS짰) Trench MOS Barrier Schottky Rectifier

V30K170-M3/I

High Current Density Surface-Mount (TMBS짰) Trench MOS Barrier Schottky Rectifier

V30K170HM3/I

Package：8-PowerTDFN；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：30A, 170V, FLATPAK 5X6 SINGLE TR

Vishay General Semiconductor - Diodes Division