Dual Trench MOS Barrier Schottky Rectifier

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VishayVishay Siliconix

威世科技

Dual TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.51 V at IF = 5 A

• Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3 • Meets MSL level 1, per J-STD-020,

文件：126.96 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Dual TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：126.96 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Dual Trench MOS Barrier Schottky Rectifier

文件：95.56 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.51 V at IF = 5 A

Trench MOS Schottky technology\n Very low profile - typical height of 1.7 mm\n Ideal for automated placement\n\n ;

Vishay

威世科技

肖特基二极管与整流器 30A 120V TrenchMOS

Vishay

威世科技

Package：TO-263-3，D²Pak（2 引线 + 凸片）变型；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 120V SMPD

Vishay General Semiconductor - Diodes Division