Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 8 A

分立 ·Trench MOS Schottky technology\n·Low forward voltage drop, low power losses\n·High efficiency operation;

Vishay

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low VF = 0.58 V at IF = 8 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

文件：83.58 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：80.46 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：87.57 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世

Package：TO-3P-3 整包；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 100V TO3PW

Vishay General Semiconductor - Diodes Division