Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: -

文件：116.99 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：116.35 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: -

文件：116.99 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.51 V at IF = 5.0 A

• Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: - Automotive

文件：116.35 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.51 V at IF = 5.0 A

• Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: - Automotive

文件：116.35 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：116.35 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：116.35 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.51 V at IF = 5.0 A

Trench MOS Schottky technology\nVery low profile - typical height of 1.7 mm\nIdeal for automated placement;

Vishay

威世

Package：TO-263-3，D²Pak（2 引线 + 凸片）变型；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：20A 100V SMPD TRENCH SKY RECT

Vishay General Semiconductor - Diodes Division

Package：TO-263-3，D²Pak（2 引线 + 凸片）变型；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：20A 100V SMPD TRENCH SKY RECT

Vishay General Semiconductor - Diodes Division