| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free a 文件：167.54 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, 文件：217.09 Kbytes 页数：6 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free a 文件：167.54 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION 文件：142.42 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A Ultra Low VF = 0.57 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and 文件：167.43 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION 文件：142.42 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, 文件：217.05 Kbytes 页数：6 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
High efficiency operation FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO 文件：157.86 Kbytes 页数：6 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A Ultra Low VF = 0.57 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and 文件：167.43 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, 文件：217.05 Kbytes 页数：6 Pages | VishayVishay Siliconix 威世科技 | Vishay |
产品属性
- 产品编号：
V20150S-E3/4W
- 制造商：
Vishay General Semiconductor - Diodes Division
- 类别：
分立半导体产品 > 二极管 - 整流器 - 单
- 系列：
TMBS®
- 包装：
卷带（TR）
- 二极管类型：
肖特基
- 电流 - 平均整流 (Io)：
20A
- 速度：
快速恢复 =< 500ns，> 200mA（Io）
- 安装类型：
通孔
- 封装/外壳：
TO-220-3
- 供应商器件封装：
TO-220-3
- 工作温度 - 结：
-55°C ~ 150°C
- 描述：
DIODE SCHOTTKY 150V 20A TO220AB
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
2447 |
TO-220AB |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
VISHAY |
25+ |
TO-220 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Vishay General Semiconductor - |
25+ |
TO-220-3 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
VISHAY/威世 |
TO-220 |
22+ |
6000 |
十年配单,只做原装 |
询价 | ||
VISHAY/威世 |
23+ |
TO-220 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
VISHAY/威世 |
23+ |
TO-220 |
6000 |
原装正品，支持实单 |
询价 | ||
24+ |
N/A |
62000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
FERRAZ/罗兰熔断器 |
23+ |
标准封装 |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
询价 | ||
Assmann |
22+ |
NA |
15374 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
AVAGO/安华高 |
2450+ |
QFN16 |
6540 |
只做原厂原装正品终端客户免费申请样品 |
询价 |
相关规格书
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- XC6124A246MG-G
- XC6124A250MG-G
- XC6124A333ER-G
- XC6124A334MR-G
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- XC6501A1817R-G
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- V24C24H50BG
- V24C24H50BG3
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- V24A15M400B3
- V24A15M400BF2
- V24A15M400BG
- V24A15M400BG3
