V20100R-E3SLASH4W中文资料威世科技数据手册PDF规格书

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low VF = 0.54 V at IF = 5 A

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106

• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.