V15PN50-M3

High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C •Materialcategorization:fordefi

V15PN50-M3

15 Ampere,50 Volt Trench Process Low Vf Schottky Barrier Rectifier

Features Lowforwardvoltagedrop ThinkiSemimaturedtrenchbarrierschottky Highcurrentcapability Highsurgecurrentcapability Lowreverseleakagecurrent Application Inverter/UPS/Converter/BMS PhotovoltaicSolarCellProtection/SMPS BatteryReverseProtectionCircuit/Charger

V15PN50-M3

High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.26 V at IF = 5 A

分立; Very low profile - typical height of 1.1 mm\nIdeal for automated placement\nTrench MOS Schottky technology;

V15PN50-M3

Trench MOS Barrier Schottky Rectifier

V15PN50-M3_V01

High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C •Materialcategorization:fordefi

V15PN50-M3/86A

Package：TO-277，3-PowerDFN；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 50V 15A TO277A

Vishay General Semiconductor - Diodes Division

V15PN50-M3/87A

Package：TO-277，3-PowerDFN；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 50V 15A TO277A

Vishay General Semiconductor - Diodes Division