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V15PM6

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/

文件:119.58 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V15PM6

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件:118.94 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V15PM6

High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.36 V at IF = 5 A

Very low profile - typical height of 1.1 mm\nTrench MOS Schottky technology\nLow forward voltage drop, low power losses;

Vishay

威世

V15PM6_V01

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/

文件:119.58 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V15PM6HM3SLASHH

High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.36 V at IF = 5 A

• Very low profile - typical height of 1.1 mm • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3

文件:118.94 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V15PM6HM3SLASHI

High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.36 V at IF = 5 A

• Very low profile - typical height of 1.1 mm • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3

文件:118.94 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V15PM6-M3SLASHH

High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.36 V at IF = 5 A

• Very low profile - typical height of 1.1 mm • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3

文件:118.94 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V15PM6-M3SLASHI

High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.36 V at IF = 5 A

• Very low profile - typical height of 1.1 mm • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3

文件:118.94 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V15PM63

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件:106.51 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V15PM6HM3/H

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件:118.94 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

供应商型号品牌批号封装库存备注价格
24+
N/A
69000
一级代理-主营优势-实惠价格-不悔选择
询价
Vishay General Semiconductor -
25+
TO-277A(SMPC)
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
VISHAY
2022+PB
TO-277A
1500
询价
VISHAY/威世
24+
TO-277A
60000
全新原装现货
询价
VISHAY/威世
24+
TO-277A
7800
全新原厂原装正品现货,低价出售,实单可谈
询价
VISHAY/威世
24+
TO-277
98000
原装现货假一罚十
询价
VISHAY
25+23+
TO-277A
31112
绝对原装正品全新进口深圳现货
询价
VISHAY/威世
23+
TO-277A
50000
全新原装正品现货,支持订货
询价
VISHAY/威世
23+
TO277
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
VISHAY
2016+
TO277A
25300
只做原装,假一罚十,公司可开17%增值税发票!
询价
更多V15PM6供应商 更新时间2026-1-19 11:06:00