V12PM12

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES •Verylowprofile-typicalheightof1.1mm •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -Automotiveorderingcode:baseP/

V12PM12

Low forward voltage drop, low power losses

V12PM12_V01

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES •Verylowprofile-typicalheightof1.1mm •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -Automotiveorderingcode:baseP/

V12PM12_15

High Current Density Surface MountTrench MOS Barrier Schottky Rectifier

V12PM12HM3

Trench MOS Barrier Schottky Rectifier

V12PM12-M3

Trench MOS Barrier Schottky Rectifier

V12PM12HM3_A/I

Package：TO-277，3-PowerDFN；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 120V 4.1A TO277A

ETC

V12PM12-M3/86A

Package：TO-277，3-PowerDFN；包装：卷带（TR）剪切带（CT） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 12A 120V TO-277AC

ETC

V12PM12-M3/87A

Package：TO-277，3-PowerDFN；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 12A 120V TO-277AC

ETC