V12PM12分立半导体产品的二极管-整流器-单规格书PDF中文资料

厂商型号	V12PM12
参数属性	V12PM12 封装/外壳为TO-277，3-PowerDFN；包装为卷带（TR）；类别为分立半导体产品的二极管-整流器-单；产品描述：DIODE SCHOTTKY 120V 4.1A TO277A
功能描述	High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier
封装外壳	TO-277，3-PowerDFN
文件大小	113.69 Kbytes
页面数量	5 页
生产厂商	Vishay Siliconix
企业简称	VISHAY【威世科技】
中文名称	威世科技半导体官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-21 20:00:00
人工找货	V12PM12价格和库存，欢迎联系客服免费人工找货

FEATURES

• Very low profile - typical height of 1.1 mm

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHM3

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in low voltage high frequency DC/DC converters,

freewheeling, and polarity protection applications.

MECHANICAL DATA

Case: SMPC (TO-277A)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS-compliant

Base P/NHM3_X - halogen-free, RoHS-compliant, and

AEC-Q101 qualified

(“_X”) denotes revision code e.g. A, B, .....)

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix

meets JESD 201 class 2 whisker test