Trench MOS Barrier Schottky Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorizat

文件：88.4 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for defi

文件：103.27 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.28 V at IF = 5 A

分立 Very low profile - typical height of 1.1 mm\nIdeal for automated placement\nTrench MOS Schottky technology;

Vishay

威世

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorizat

文件：608.91 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorizat

文件：608.91 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for defi

文件：103.27 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorizat

文件：608.91 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorizat

文件：608.91 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件：86.25 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Package：TO-277，3-PowerDFN；包装：卷带（TR）剪切带（CT） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 45V 6A TO277A

Vishay General Semiconductor - Diodes Division