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V10150C

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B106 (for TO-220AB, ITO-

文件:168.07 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世威世科技公司

V10150C

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

文件:150.03 Kbytes 页数:4 Pages

VishayVishay Siliconix

威世威世科技公司

V10150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:130.4 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世威世科技公司

V10150C

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:161.64 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世威世科技公司

V10150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:131.96 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世威世科技公司

V10150C

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:168.31 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世威世科技公司

V10150C_V01

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

文件:150.03 Kbytes 页数:4 Pages

VishayVishay Siliconix

威世威世科技公司

V10150C-E3/4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B106 (for TO-220AB, ITO-

文件:168.07 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世威世科技公司

V10150C-E3SLASH4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B106 (for TO-220AB, ITO-

文件:168.07 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世威世科技公司

V10150C_09

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:161.64 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世威世科技公司

详细参数

  • 型号:

    V10150C

  • 制造商:

    VISHAY

  • 制造商全称:

    Vishay Siliconix

  • 功能描述:

    Dual High-Voltage Trench MOS Barrier Schottky Rectifier

供应商型号品牌批号封装库存备注价格
中性
23+
TO220-3
50000
全新原装正品现货,支持订货
询价
VISHAY/威世
24+
NA/
3350
原装现货,当天可交货,原型号开票
询价
VISHAY/威世
24+
TO-220
60000
全新原装现货
询价
VISHAY
2016+
TO-220
6000
公司只做原装,假一罚十,可开17%增值税发票!
询价
VISHAY
17+
TO220-3
6200
询价
Vishay
24+
NA
3000
进口原装正品优势供应
询价
VISHAY/威世通
20+
TO220-3
38560
原装优势主营型号-可开原型号增税票
询价
VISHAY
24+
TO-220
65200
一级代理/放心采购
询价
VISHAY
25+
TO-220
3675
就找我吧!--邀您体验愉快问购元件!
询价
VISHAY
23+
TO-220
50000
全新原装正品现货,支持订货
询价
更多V10150C供应商 更新时间2025-12-10 11:00:00