Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

文件：150.03 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

文件：127.45 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世

VISHAY
SMPC

VishayVishay Siliconix

威世

上传：深圳市芯巴巴科技有限公司

Vishay
TO-277A-3

VishayVishay Siliconix

威世

上传：深圳市金嘉锐电子有限公司

VISHAY
TO-247

VishayVishay Siliconix

威世

上传：深圳市纳艾斯科技有限公司