PESD3V3V4UG

Marking：V1；Package：SOT353；Very low capacitance unidirectional quadruple ESD protection diode arrays

1.1Generaldescription VerylowcapacitanceunidirectionalquadrupleElectroStaticDischarge(ESD)protection diodearraysinsmallSurface-MountedDevice(SMD)plasticpackagesdesignedto protectuptofoursignallinesfromthedamagecausedbyESDandothertransients. 1.2Features 1.3A

PMEG2010BEA

Marking：V1；Package：SOD323；1 A very low VF MEGA Schottky barrier rectifier

FEATURES •Forwardcurrent:1A •Reversevoltages:20V,30V,40V •Verylowforwardvoltage •UltrasmallandverysmallplasticSMDpackage •PowerdissipationcomparabletoSOT23. APPLICATIONS •HighefficiencyDC-to-DCconversion •Voltageclamping •Protectioncircuits •Lowvolt

PMEG2010BEA

Marking：V1；Package：SOD323；1 A very low VF MEGA Schottky barrier rectifier

1.Generaldescription PlanarMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierwithanintegrated guardringforstressprotection,encapsulatedinaverysmallSOD323(SC-76)Surface-Mounted Device(SMD)plasticpackage. 2.Featuresandbenefits •Forwardcurrent:1

UCLAMP1521ZVTFT

Marking：V1；μClamp® 1-Line ESD & Surge Protection

Features •HighESDwithstandVoltage:±30kV(Contact&AIr) perIEC61000-4-2 •Highpeakpulsecurrentcapability:18A(tp=8/20μs) •Ultra-smallpackage(1.0x0.6x0.25mm) •ProtectsoneI/Oorpowerline •LowESDclampingvoltage •Workingvoltage:±15V •Solid-statesilicon-avalan

BD45312

Marking：V1；Package：SSOP5；Counter Timer Built-in CMOS Voltage Detector IC

BD45312G-TR

Marking：V1；Package：SSOP5；Counter Timer Built-in CMOS Voltage Detector IC

BD45312G-TR

Marking：V1；Package：SSOP5；Counter Timer Built-in CMOS Voltage Detector IC

BZX584C47

Marking：V1；Package：SOD-523；Zener Diode

DOX2301

Marking：V1；Package：SOT-323；N-Channel MOSFET uses advanced trench technology

FP6863S5G

Marking：V1；Package：SOT-23-5；Slew Rate Limited Load Switch