20A, 40V N-CHANNEL ENHANCEMENT MODE

 DESCRIPTION The UTT20N04 uses UTC’s advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 33 mΩ @ VGS=10V, ID=10A RDS(ON) ≤ 60 mΩ @

文件：446.1 Kbytes 页数：7 Pages

UTC

友顺

20A, 40V N-CHANNEL ENHANCEMENT MODE

The UTT20N04 uses UTC’s advanced trench technology toprovide excellent RDS(ON), low gate charge and operation with lowgate voltages. This device is suitable for use as a load switch orin PWM applications. RDS(ON) ≤ 33 mΩ @ VGS=10V, ID=10ARDS(ON) ≤ 60 mΩ @ VGS=4.5V, ID=10A Low capacitance Low gate charge Fast switching capability Avalanche energy specified;

UTC

友顺

20A, 40V N-CHANNEL ENHANCEMENT MODE

 DESCRIPTION The UTT20N04 uses UTC’s advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 33 mΩ @ VGS=10V, ID=10A RDS(ON) ≤ 60 mΩ @

文件：446.1 Kbytes 页数：7 Pages

UTC

友顺

N-Channel Enhancement Mode Field Effect Transistor

文件：521.34 Kbytes 页数：6 Pages

YANGJIE

扬杰电子